optoisolators (photocouplers) 1 publication date: may 2002 shf00007aed CNC7H001 optoisolator features ? housed in a surface mount package alternative to mini-flat package of 1.27 mm pitch ? double molded package ? 2.5 kv isolation voltage ? ul approved (file no. e79920) applications ? suited for interface circuits requiring high density mounting of parts, especially hybrid ics and programmable controllers ? signal transfer between circuits with different potentials and with impedances absolute maximum ratings t a = 25 c 16 15 14 13 12 11 10 9 12345678 top view 4.4 7.0 0.3 2.0 0.1 0.1 10.3 0.3 1.27 0.4 9 8 1 16 0.5 0.3 0.15 +0.10 - 0.05 (1.3) note) * 1: pulse repetition rate = 100 pps. pulse wide 100 s * 2: above 25 c ambient temperature, derate dissipation at the rate of 0.75 mw/ c. * 3: above 25 c ambient temperature, derate dissipation at the rate of 1.2 mw/ c. * 4: ac voltage (t = 1.0 min., rh < 60%) parameter symbol rating unit input (light forward current (dc) i f 50 ma emitting diode) pulse forward current * 1 i fp 1a power dissipation * 2 p d 75 mw/ch output (photo co llector current i c 50 ma transistor) collector-emitter voltage v ceo 80 v emitter-collector voltage v eco 7v collector power dissipation * 3 p c 120 mw/ch isolation voltage, input to output * 4 v iso 2 500 v[rms] operating ambient temperature t opr ? 30 to + 100 c storage temperature t stg ? 55 to + 125 c unit: mm pin connection 1, 3, 5, 7 : anode/cathode 2, 4, 6, 8 : cathode/anode 9, 11, 13, 15 : emitter 10, 12, 14, 16: collector pctfg116-001 package maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
CNC7H001 2 shf00007aed parameter symbol conditions min typ max unit input forward voltage v f i f 50 ma 1.35 1.5 v diode capacitance c t v r 0 v, f 1 mhz 15 pf output collector-emitter dark current i ceo v ce 20 v 5 100 na transistor collector-em itter voltage v ceo i c 100 a80v emitter-collector voltage v eco i e 10 a7v collector capacitance c c v ce 10 v, f 1 mhz 10 pf coupled current transfer ratio * 1 ctr v ce 5 v, i f 5 ma 100 600 % capacitance c iso f 1 mhz 0.6 pf resistance r iso v iso 500 v 10 11 rise time * 2 t r v cc 10 v, i c 2 ma 4 s fall time * 3 t f r l 100 3 saturation voltage v ce(sat) i f 20 ma, i c 1 ma 0.1 0.2 v collector current ratio * 4 i c(ratio) v ce 5 v, i f 5 ma 0.33 1 3.0 electrical characteristics t a 25 c 3 c note) * 1: ctr i c / i f
100% * 2: rise time is defined as the time required for the collector current to rise from 10% to 90% of peak value. * 3: fall time is defined as the time required for the collector current to decrease from 90% to 10% of peak value. * 4: i c(ratio) i c2 (i f i f2 , v ce 5 v) i c1 (i f i f1 , v ce 5 v) input and output are practiced by electricity. the device is designed be disregarded radiation. p c , p d t a i f v f i c i f ambient temperature t a ( c) collector power dissipation , power dissipation p c , p d (mw) 160 120 80 40 0 0 20406080 120 100 20 p c p d 60 40 50 30 20 10 0 t a 25 c forward voltage v f (v) forward current i f (ma) 0.4 1.6 1.2 2.4 2.0 0.8 0 forward current i f (ma) collector current i c (ma) 10 2 10 1 10 1 10 2 10 1 11010 2 v cc 5 v t a 25 c
CNC7H001 3 shf00007aed i c v ce i c t a i ceo t a t r i c t f i c frequency characteristics 0 20 10 50 40 30 collector current i c (ma) collector-emitter voltage v ce (v) 024681012 25 ma 20 ma 15 ma 10 ma 5 ma 1 ma 2 ma i f 30 ma ambient temperature t a ( c) relative collector current i c (%) 180 140 100 60 20 20 0 40 60 20 80 100 10 2 40 200 204060 10 1 10 1 10 4 10 3 10 2 100 80 collector-emitter dark current i ceo (na) ambient temperature t a ( c) v ce 20 v collector current i c (ma) rise time t r ( s) 10 2 10 1 10 1 10 2 10 1 11010 2 10% 90% t d t r t f r l v cc v 1 v 2 v 2 v 1 50 sig. in r l 1 k 500 100 v cc 10 v t a 25 c collector current i c (ma) fall time t f ( s) 10 2 10 1 10 1 10 2 10 1 11010 2 10% 90% t d t r t f r l v cc v 1 v 2 v 2 v 1 50 sig. in r l 1 k 500 100 v cc 10 v t a 25 c frequency f (khz) relative power output p (db) 10 2 10 1 10 1 10 2 11010 2 10 3 t a 25 c i f 5 ma 2 ma
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